砷化鎵晶片 GaAs Wafer
我們研發(fā)并生產(chǎn)的2-6英半導(dǎo)體級(jí)以及半絕緣級(jí)高純度砷化鎵晶體和晶片被廣泛應(yīng)用于半導(dǎo)體集成電路以及LED通用照明等領(lǐng)域。
Our 2’’ to 6’’ semi-conducting & semi-insulating GaAs crystal & wafer are wildly used in semiconductor integrated circuit application & LED general lighting application.
半導(dǎo)體砷化鎵規(guī)格 Specifications of semi-conducting GaAs wafer
生長(zhǎng)方法 |
VGF |
|||
摻雜類(lèi)型 |
P型:鋅 |
N型:硅 |
||
晶片形狀 |
圓形(尺寸2、3、4、6英寸) |
|||
晶向 |
(100)±0.5° |
|||
* Other Orientations maybe available upon request |
||||
Dopant |
硅 (N 型) |
鋅 (P 型) |
||
載流子濃度 |
( 0.8-4) × 1018 |
( 0.5-5) × 1019 |
||
遷移率 |
( 1-2.5) × 103 |
50-120 |
||
位錯(cuò) |
100-5000 |
3,000-5,000 |
||
直徑 |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
|
厚度 |
350±25 |
625±25 |
625±25 |
|
TTV [P/P] (μm) |
≤ 4 |
≤ 4 |
≤ 4 |
|
TTV [P/E] (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
|
WARP (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
|
OF (mm) |
17±1 |
22±1 |
32.5±1 |
|
OF / IF (mm) |
7±1 |
12±1 |
18±1 |
|
Polish* |
E/E, |
E/E, |
E/E, |
|
*E=Etched, P=Polished(*E=腐蝕, P=拋光) |
||||
**If needed by customer |
半絕緣砷化鎵 Specifications of semi-insulating GaAs wafer
生長(zhǎng)方法 Growth Method |
VGF |
|||
摻雜類(lèi)型 Dopant |
SI 型:碳 SI Type: Carbon |
|||
晶片形狀 Wafer Shape |
圓形(尺寸2、3、4、6英寸) Round (DIA: 2", 3", 4", 6") |
|||
晶向 Surface Orientation * |
(100)±0.5° |
|||
* Other Orientations maybe available upon request 其他晶向要求可根據(jù)客戶需求加工 |
||||
電阻率 Resistivity (Ω.cm) |
≥ 1 × 107 |
≥ 1 × 108 |
||
遷移率 Mobility (cm2/V.S) |
≥ 5,000 |
≥ 4,000 |
||
位錯(cuò) Etch Pitch Density (cm2) |
1,500-5,000 |
1,500-5,000 |
||
晶片直徑 Wafer Diameter (mm) |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
150±0.3 |
厚度 Thickness (μm) |
350±25 |
625±25 |
625±25 |
675±25 |
TTV [P/P] (μm) |
≤ 4 |
≤ 4 |
≤ 4 |
≤ 4 |
TTV [P/E] (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 10 |
WARP (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 15 |
OF (mm) |
17±1 |
22±1 |
32.5±1 |
NOTCH |
OF / IF (mm) |
7±1 |
12±1 |
18±1 |
N/A |
Polish* |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
*E=Etched, P=Polished (*E=腐蝕, P=拋光) |
||||
**If needed by customer 根據(jù)客戶需要 |
滇公網(wǎng)安備 53019002000263號(hào)